NTD600N80S3Z PÅ
| Tilgængelig |
NTD600N80S3Z ON
• Typ. RDS(on) = 550 m
• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
• Low Stored Energy in Output Capacitance (Eoss = 1.74 J @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
• Typ. RDS(on) = 550 m
• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
• Low Stored Energy in Output Capacitance (Eoss = 1.74 J @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.
